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Though both referred to as "deposition", PCD and CVD differ greatly in functions.

2026-09-21

Tin tức công ty mới nhất về Though both referred to as

Core Reasons:

  1. PVD mainly removes source materials by physical means and transports them onto the wafer.
  2. CVD enables gaseous precursors to continuously undergo chemical reactions on the surface.

When selecting a process, the real questions to consider are how the material arrives at the surface, where the film forms, and what mechanism terminates the growth.


Processes:

  1. PVD: Extract materials from the solid source first PVD is the general term for Physical Vapor DepositionEvaporation uses heat sources or electron beams to vaporize materials; sputtering employs plasma ions to bombard the target and knock out target atoms. Film-forming species are transported in a vacuum and finally condense on the wafer surface.
  2. CVD: Gases react continuously to form films after reaching the surface CVD stands for Chemical Vapor Deposition. Precursors travel with gas flow to the vicinity of the wafer, pass through the boundary layer, then adsorb, decompose or react on the surface. Solids deposit on   the wafer, while volatile byproducts are exhausted.

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